Electrical and Optical Properties of Si-SnO2Heterojunctions

摘要: Electrical and optical properties have been investigated on Si–SnO2 heterojunctions. Semiconducting SnO2 film has grown by a successive oxidation of the evaporated tin (111) surface silicon single crystal. The shows degenerate n-type semiconductor having band gap energy 3.5 eV. current-voltage characteristics Si–SnO2n–n heterojunction represent good rectification. photovoltage measurements demonstrate that photoresponse in wide wavelength region from 400 to 1200 mµ at room temperature. diagram is determined results these electrical measurements.