Crystalline Grains and Electrical Properties of Vacuumevaporated SnO 2 Thin Films
作者： W. K. Man , H. Yan , S. P. Wong , T. K. S. Wong , I. H. Wilson
DOI: 10.1557/PROC-403-441
关键词:
摘要: We have studied grain growth and electrical properties of polycrystalline tin oxide (SnO 2 ) thin films prepared by vacuum-evaporation with a two-step process: evaporation metal then oxidation these films. Surface morphology the SnO was observed atomic force microscopy. The size is found to increase film thickness temperature. Kinetics discussed in terms 3-dimensional diffusion limited process. diode current-voltage (I-V) characteristic /Si heterojunctions (isotype anisotype) measured temperature range 14K-383K. Changes ideality factor threshold voltage are discussed. In addition, we present ambient tunnelling I-V results from individual grains.
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