Characterization and reliability of low dielectric constant fluorosilicate glass and silicon rich oxide process for deep sub-micron device application
作者： YL Cheng , Ying-Lang Wang , CW Liu , YL Wu , Kuang-Yao Lo
DOI: 10.1016/S0040-6090(01)01314-1
关键词:
摘要: Abstract Fluorosilicate Glass (FSG) with low dielectric constant currently has been replaced as an alternative to SiO2 for device speed improvement. However, several integration aspects, such Fluorine (F) distribution, F thermal stability, gap fill capability, capacitance reduction and via resistance of FSG prepared by the high density plasma (HDP) chemical vapor deposition (CVD) method are concern sub-0.18-μm devices. In this study, HDP–FSG films show different concentrations at locations on 8-inch wafer. addition, film shows poor stability diffuses out after temperature annealing pressure cook test (PCT). can be improved capping oxide layer. The results indicate that silicon rich (SRO) a better effect blocking diffusion than enhanced (PE-OX). For HDP-FSG all 0.23-μm gaps some 0.21-μm aspect ratio
harvard.edu
nctu.edu.tw
elsevier.com
researchgate.net 参考文章(8)
M.J. Shapiro, S.V. Nguyen, T. Matsuda, D. Dobuzinsky, CVD of fluorosilicate glass for ULSI applications Thin Solid Films. ,vol. 270, pp. 503- 507 ,(1995) , 10.1016/0040-6090(95)06896-1
Chiu H. Ting, Thomas E. Seidel, Methods And Needs For Low K Material Research MRS Proceedings. ,vol. 381, pp. 3- ,(1995) , 10.1557/PROC-381-3
Tesuya Homma, Fluorinated interlayer dielectric films in ULSI multilevel interconnections Journal of Non-crystalline Solids. ,vol. 187, pp. 49- 59 ,(1995) , 10.1016/0022-3093(95)00110-7
Mohan K Bhan, Judy Huang, David Cheung, Deposition of stable, low κ and high deposition rate SiF4-doped TEOS fluorinated silicon dioxide (SiOF) films Thin Solid Films. ,vol. 308, pp. 507- 511 ,(1997) , 10.1016/S0040-6090(97)00478-1
Seoghyeong Lee, Jong‐Wan Park, Effect of fluorine on dielectric properties of SiOF films Journal of Applied Physics. ,vol. 80, pp. 5260- 5263 ,(1996) , 10.1063/1.363512
Tetsuya Homma, Low dielectric constant materials and methods for interlayer dielectric films in ultralarge-scale integrated circuit multilevel interconnections Materials Science & Engineering R-reports. ,vol. 23, pp. 243- 285 ,(1998) , 10.1016/S0927-796X(98)00012-6
Gérard Passemard, Pascal Fugier, Patrice Noel, Fabrice Pires, Olivier Demolliens, Study of fluorine stability in fluoro-silicate glass and effects on dielectric properties Microelectronic Engineering. ,vol. 33, pp. 335- 342 ,(1997) , 10.1016/S0167-9317(96)00062-7
Sang M. Han, Eray S. Aydil, Reasons for lower dielectric constant of fluorinated SiO2 films Journal of Applied Physics. ,vol. 83, pp. 2172- 2178 ,(1998) , 10.1063/1.366955