Stress Evolution Related to Metal Routing in Submicron Multilevel Interconnects: Void and Extrusion
作者： Yong-Bum Jo , Jongwoo Park , June-Kyun Park , Kyung-Il Ouh , Hyun-Goo Jeon
DOI: 10.1109/TCAPT.2007.906322
关键词:
摘要: Failure mechanism of submicron multilevel interconnects encapsulated in a quad flat package subjected to high temperature operating life (HTOL) test under and bias has been investigated. With the presence void formation upper metal, Al extrudes from lower metal adjacent lines leading fatal short failure. Void itself is not critical but later growth extrusion compromises integrity circuit reliability. Such failure explained with stress evolution on routing associated tensile imposed adhered thicker interlayer dielectric certain points then relived that triggers compressive layer causing extrusion. For purpose verification, new layout committed HTOL. We found aspect ratio line significantly influences interconnects.
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