Method for producing a luminous element of III-group nitride
作者： Katsuhide Manabe , Isamu Akasaki , Hiroshi Amano , Teruo Tohma , Toshiyuki Tanaka
DOI:
关键词:
摘要: Disclosure is a process for producing luminous element of III-group nitride semiconductor having crystal layer (Alx Ga1-x)1-y Iny N (0≦x≦1, 0≦y≦1) to which II-group added, comprising the steps forming added; irradiating low energy electron beam onto topmost surface reform only layer; thin film absorbing optical on and pulse-heating by heating means layer, thereby produce bluish green, blue or UV light emitting diode laser with high precision color purity.
lens.org 参考文章(8)
Takahiro Kozawa, Method of manufacturing gallium nitride semiconductor light-emitting device ,(1992)
Shuji C O Nichia Kagaku Kogyo K.K. Nakamura, Crystal growth method for gallium nitride-based compound semiconductor ,(1992)
Katsuhide Manabe, Shiro Yamazaki, Norikatsu Koide, Isamu Akasaki, Hiroshi Amano, Gallium nitride group compound semiconductor laser diode ,(1995)
Masayuki Senoh, Naruhito Iwasa, Shuji Nakamura, Method of manufacturing P-type compound semiconductor ,(1992)
Hiroshi Amano, Masahiro Kito, Kazumasa Hiramatsu, Isamu Akasaki, P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) Japanese Journal of Applied Physics. ,vol. 28, ,(1989) , 10.1143/JJAP.28.L2112
Shuji Nakamura, Takashi Mukai, Masayuki Senoh, Naruhito Iwasa, Thermal Annealing Effects on P-Type Mg-Doped GaN Films Japanese Journal of Applied Physics. ,vol. 31, pp. L139- L142 ,(1992) , 10.1143/JJAP.31.L139
Katsuhide Manabe, Atsushi Watanabe, Isamu Akasaki, Hiroshi Amano, Tetsuya Takeuchi, Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer ,(1993)
Akira Ueno, Tsuneo Mitsuyu, Production of thin film of gallium nitride ,(1990)