作者: T. Taniguchi , L. M. K. Vandersypen , K. Watanabe , A. Barreiro , A. M. Goossens
DOI: 10.1063/1.3685504
关键词:
摘要: Contamination of graphene due to residues from nanofabrication often introduces background doping and reduces electron mobility. For samples high electronic quality, post-lithography cleaning treatments are therefore needed. We report that mechanical based on contact mode atomic force microscopy removes significantly improves the properties. A mechanically cleaned dual-gated bilayer transistor with hexagonal boron nitride dielectrics exhibited a mobility ∼36 000 cm2/Vs at low temperature.