Electrically pumped broadly tunable mid-infrared lasers based on quantum confined transition metal doped semiconductors

摘要: Electrically pumped mid-IR semiconductor lasers that are operable at room temperature and possess a range of tunability up to 1100 nm, which constitutes revolutionary (1-2 orders magnitude) improvement in the over existing laser technology utilizing Doped quantum confined host material (DQCH) with characteristic spatial dimension confinement tuned enable overlap discrete levels impurity ions efficient energy transfer from separated carriers impurity, wherein: said DQCH has formula TM:MeZ and/or MeX2Z4, wherein Me is selected group consisting Zn, Cd, Ca, Mg, Sr, Ba, Hg, Pb, Cu, Al, Ga, In; Z S, Se, Te, O, N, P, As, Sb their mixtures; X being In, Al; TM V, Cr, Mn, Fe, Co, Ni.