Method for evaluating interfacial resistances of thermoelectric devices using I-V measurement
作者： Dong Hwan Kim , Cham Kim , Jong Tae Kim , Duck Ki Yoon , Hoyoung Kim
DOI: 10.1016/J.MEASUREMENT.2018.07.030
关键词:
摘要: Abstract Research on the methodology for predicting and analyzing performance of a thermoelectric device (TED) can offer various possibilities enhancing its energy conversion characteristics. In this work, to determine electrical contact resistance interfacial thermal TED was studied. Based one-dimensional heat transfer equations power generation mode that includes resistance, we derived explicit expressions open circuit voltage short current as limiting cases external load. The measurements short-circuit were carried out interface materials (TIMs) between reservoirs under varying compressive forces. determined by matching measured values results analytic model. resistivity tested approximately 3 × 10−9 Ωm2, irrespective force, hot-side temperature, TIMs. varied sensitively with TIMs decreased
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