Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces
作者： Dr. A.J. Henegar , Prof. T. Gougousi
DOI: 10.1016/J.APSUSC.2016.08.144
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摘要: Abstract In this manuscript we compare the interaction of alkyl (trimethyl aluminum) and amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition with III-V native oxides. For that purpose deposit Al2O3 TiO2, using H2O as oxidizer, on GaAs(100) InAs(100) oxide surfaces. We find there are distinct differences in behavior two films. ALD very little removal happens after first few cycles while precursor for TiO2 oxides continues well surface has been covered 2 nm TiO2. This difference is traced to superior properties a diffusion barrier. Differences also found arsenic InAs GaAs substrates. The from mix more efficiently growing dielectric film than those surface. attributed lower stability an initial path formation by indium
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