Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces

摘要: Abstract The goal of this article is to provide an overview the state knowledge regarding Atomic Layer Deposition (ALD) metal oxides on III–V semiconductor surfaces. An introduction ALD, band structure, various defects present surface and how they relate Fermi level pinning are discussed. Surface passivation approaches examined in detail conjunction with experimental computational results. “interface clean-up” reaction that leads formation a sharp gate oxide/semiconductor interface related chemistry transport through growing dielectric film. Finally, deposition semiconductors discussed context quality some examples devices using channels ALD given.