Comparative study on in situ surface cleaning effect of intrinsic oxide-covering GaAs surface using TMA precursor and Al2O3 buffer layer for HfGdO gate dielectrics
作者： Juan Gao , Gang He , Shuang Liang , Die Wang , Bing Yang
DOI: 10.1039/C8TC00070K
关键词:
摘要: … properties of HfO2/ GaAs modulated by the ‘‘self-cleaning’’ effect of Al2O3 after S passivation.However… On the one hand, the work function difference between the Al electrode and …
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