A review of rare-earth oxide films as high k dielectrics in MOS devices — Commemorating the 100th anniversary of the birth of Academician Guangxian Xu
作者： Shuan Li , Youyu Lin , Siyao Tang , Lili Feng , Xingguo Li
DOI: 10.1016/J.JRE.2020.10.013
关键词:
摘要: Abstract Recently, rare-earth oxide films have attracted more and attention as gate dielectrics in metal-oxide-semiconductor (MOS) devices, showing the advantages of high dielectric constant (k value), large band gap (Eg) outstanding physical chemical stability contact with silicon substrates. This paper reviews recent development rare earth oxide-based films. Aiming at problem that k value oxides (REOs) is generally inversely proportional to value, one biggest technical obstacles films, we reviewed three strategies reported papers, namely doping modification, nitriding treatment multilayer composite, which can provide some insights for long-term MOS devices integrated circuit (IC).
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