In situ infrared spectroscopy study of the interface self-cleaning during the atomic layer deposition of HfO2 on GaAs(100) surfaces
作者： Liwang Ye , Theodosia Gougousi
DOI: 10.1063/1.4896501
关键词:
摘要: In situ attenuated total reflectance Fourier transform infrared spectroscopy was utilized to study the interface evolution during atomic layer deposition (ALD) of HfO2 on GaAs surfaces using tetrakis (dimethylamino) hafnium and H2O. The experiments were performed chemical oxide hydrogen fluoride etched GaAs(100) starting surfaces. For at 275 °C, which corresponds optimal ALD process temperature, continuous arsenic removal observed for first 20 cycles. more pronounced initial 1-2 cycles but nonetheless persisted, a reduced rate, up 20th cycle. substrate temperature confirmed affect removal; rate significant temperatures above 250 °C while negligible below 200 °C.
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