Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces
作者： Justin C. Hackley , J. Derek Demaree , Theodosia Gougousi
DOI: 10.1063/1.2908223
关键词: Analytical chemistry 、 Passivation 、 Vacuum deposition 、 Materials science 、 X-ray photoelectron spectroscopy 、 Rutherford backscattering spectrometry 、 Ellipsometry 、 Atomic layer deposition 、 Oxide 、 Layer (electronics)
摘要: HfO2 films have been deposited by using a tetrakis(dimethylamino)hafnium/H2O atomic layer deposition (ALD) process on GaAs. X-ray photoelectron spectroscopy measurements show that the HF and NH4OH predeposition surface treatment results in efficient removal of Ga As native oxides. No interface oxidation is detected after 15cycles ALD implying effective passivation GaAs surface. Spectroscopic ellipsometry confirms linear growth at 1.0A∕cycle both starting surfaces, while Rutherford backscattering spectrometry indicates steady-state coverage about 10 cycles. For grown oxide GaAs, complete observed 20
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Martin M Frank, Glen D Wilk, Dmitri Starodub, Torgny Gustafsson, Eric Garfunkel, Yves J Chabal, John Grazul, David A Muller, None, HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition Applied Physics Letters. ,vol. 86, pp. 152904- ,(2005) , 10.1063/1.1899745
C-H Chang, Y-K Chiou, Y-C Chang, K-Y Lee, T-D Lin, T-B Wu, M Hong, J Kwo, None, Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As Applied Physics Letters. ,vol. 89, pp. 242911- ,(2006) , 10.1063/1.2405387
ML Huang, YC Chang, CH Chang, YJ Lee, P Chang, J Kwo, TB Wu, M Hong, None, Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3 Applied Physics Letters. ,vol. 87, pp. 252104- ,(2005) , 10.1063/1.2146060
Justin C. Hackley, Theodosia Gougousi, J. Derek Demaree, Nucleation of HfO2 atomic layer deposition films on chemical oxide and H-terminated Si Journal of Applied Physics. ,vol. 102, pp. 034101- ,(2007) , 10.1063/1.2764223
C. H. Hsu, J. Deng, C. R. Staddon, P. H. Beton, Growth front nucleation of rubrene thin films for high mobility organic transistors Applied Physics Letters. ,vol. 91, pp. 193505- ,(2007) , 10.1063/1.2805030
Davood Shahrjerdi, Emanuel Tutuc, Sanjay K. Banerjee, Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2 O3 gate dielectric Applied Physics Letters. ,vol. 91, pp. 063501- ,(2007) , 10.1063/1.2764438
G. D. Wilk, R. M. Wallace, J. M. Anthony, High-κ gate dielectrics: Current status and materials properties considerations Journal of Applied Physics. ,vol. 89, pp. 5243- 5275 ,(2001) , 10.1063/1.1361065
C.C Surdu-Bob, S.O Saied, J.L Sullivan, An X-ray photoelectron spectroscopy study of the oxides of GaAs Applied Surface Science. ,vol. 183, pp. 126- 136 ,(2001) , 10.1016/S0169-4332(01)00583-9
Fei Gao, S. J. Lee, D. Z. Chi, S. Balakumar, D.-L. Kwong, GaAs metal-oxide-semiconductor device with HfO2∕TaN gate stack and thermal nitridation surface passivation Applied Physics Letters. ,vol. 90, pp. 252904- ,(2007) , 10.1063/1.2749840
P.D. Ye, G.D. Wilk, J. Kwo, B. Yang, H.-J.L. Gossmann, M. Frei, S.N.G. Chu, J.P. Mannaerts, M. Sergent, M. Hong, K.K. Ng, J. Bude, GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition IEEE Electron Device Letters. ,vol. 24, pp. 209- 211 ,(2003) , 10.1109/LED.2003.812144