Power-law logistic model for the current-time characteristic of metal gate/high-K/III-V semiconductor capacitors
作者： E. Miranda , C. Mahata , T. Das , C. K. Maiti
DOI: 10.1109/SCED.2011.5744230
关键词: Materials science 、 Capacitor 、 Constant (mathematics) 、 Metal gate 、 Electrical engineering 、 Condensed matter physics 、 Logic gate 、 Electrical network 、 High-κ dielectric 、 Semiconductor 、 Power law
摘要: This paper deals with the leakage current variation occurring in Al/HfYO x /GaAs capacitors subjected to constant electrical stress. It is shown that current-time characteristic of such structures follows a power-law logistic model arises from an extension Curie-von Schweidler law. The proposed based on equivalent circuit representation degraded structure which series and parallel resistances play fundamental role.
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