Heat-resistant ohmic electrode

摘要: This invention comprises a Pd layer formed on an n-type GaAs semiconductor crystals, and Ge being the layer, characterized in that thickness of is between 300 Å 1500 500 Å. And this provides ohmic electrode forming process for compound crystals comprising first step palladium (Pd) crystal; second germanium (Ge) layer; annealing by rapid thermal treatment. The step; are heated 3 seconds to 20 at temperature 500° C. 650° As treatment, flash treatment effective.