A stochastic route to simulate the growth of porous anodic alumina
作者： Jin-Yi Li , Zeng-Qiang Wu , Jing-Juan Xu , Cheng-Yong Li , Hong-Yuan Chen
DOI: 10.1039/C4RA08834D
关键词:
摘要: Porous anodic alumina (PAA) film is composed of highly ordered and controllable structures, their extensive application requires the understanding growing mechanism. Herein, we present a localized oxidation model to unravel phenomena PAA growth, showing that random processes converge into an formation due unique characteristics ion transport confinement in alumina. The anodizing voltage shows quadratic relationship with barrier layer depth. In addition, predict furcate conditions threshold produce by our model.
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