作者: Yuuki Kitanaka , Yuji Noguchi , Masaru Miyayama
DOI: 10.2497/JJSPM.59.22
关键词:
摘要: In ferroelectric/piezoelectric materials, lattice defects with a high density often deteriorate their properties, and essential nature does not appear. Recently, Bi-based ferroelectrics have attracted much attention as Pb-free material from the environmental economical points of view. However, high-quality single crystals been obtained over past 60 years because defect-related problems, fundamental properties are shrouded in veil. present article, we show crystal growth technique under oxygen pressure an effective method for growing ferroelectric crystals.