作者: Chung-Feng Jeffery Kuo , Hung-Min Tu , Shin-Wei Liang , Wei-Lun Tsai
DOI: 10.1016/J.OPTLASTEC.2010.01.013
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摘要: Abstract This study used ultraviolet laser to perform the microcrystalline silicon thin film solar cell isolation scribing process, and applied Taguchi method an L18 orthogonal array plan experiment. The materials included ZnO:Al, AZO transparent conductive with a thickness of 200 nm, at 38% crystallinity 500 nm, aluminum back contact layer 300 nm. main objective was ensure success scribing. After isolation, using minimum line width, flattest trough bottom, processing edge surface bumps as quality characteristics, this performed effect analysis ANOVA (analysis variance) theory identify single optimal parameter. It then employed hierarchical structure AHP (analytic hierarchy process) establish positive contrast matrix. consistency verification, global weight calculation, priority sequencing, multi-attribute parameters were obtained. Finally, experimental results verified by confirmation experiment confidence interval calculation. width (200 nm) 45.6 μm, (at crystallinity) 50.63 μm (300 nm) 30.96 μm. within 95% interval, verifying that in process for has high reproducibility.