Method for preparing thin film transistor
作者： Kong Xiangyong
DOI:
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摘要: The present invention relates to the technical field of liquid crystal displays, and particularly discloses a method for preparing thin film transistor. According scheme invention, metal material conducting patterning treatment in dry etching manner is adopted replace existing preparation top gate layer. In this way, layer insulating are treated manner. As result, line width difference between reduced or eliminated. characteristics transistor optimized.
lens.org 参考文章(7)
Seok Lee, Jung Jun, Deuk Lee, Method of fabricating liquid crystal display with a high aperture ratio ,(2001)
Arne Fleissner, Method of forming a top gate transistor ,(2012)
Qianqian Bu, Lu Wang, Wei Guo, Lei Zhao, Qingrong Ren, Zhiqiang Jiang, Thin film transistor, manufacturing method thereof, array substrate and display device ,(2013)
Kazuhiro Sasaki, 和広 佐々木, Takeshi Toyoshima, 剛 豊島, Image reading device and method of manufacturing same ,(2007)
Zhuang Yan, Li Gujun, Array substrate, display device ,(2016)
Yong-Ho Jang, Jong-Uk Bae, Shift register and a display device using the shift register ,(2016)
Chen Jie, Zhang Dongli, Wang Mingxiang, Thin film transistor with bipolar operating characteristics ,(2014)