Schottky contact and the thermal stability of Ni on n-type GaN
作者： J. D. Guo , F. M. Pan , M. S. Feng , R. J. Guo , P. F. Chou
DOI: 10.1063/1.363822
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摘要: … suggested that Schottky barriers on GaN should have barrier heights which depend directly on the workfunction difference between the metal and GaN because of the ionic nature of …
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M. Asif Khan, J. N. Kuznia, A. R. Bhattarai, D. T. Olson, Metal semiconductor field effect transistor based on single crystal GaN Applied Physics Letters. ,vol. 62, pp. 1786- 1787 ,(1993) , 10.1063/1.109549
J. S. Foresi, T. D. Moustakas, Metal contacts to gallium nitride Applied Physics Letters. ,vol. 62, pp. 2859- 2861 ,(1993) , 10.1063/1.109207
J. P. Zheng, H. S. Kwok, Low resistivity indium tin oxide films by pulsed laser deposition Applied Physics Letters. ,vol. 63, pp. 1- 3 ,(1993) , 10.1063/1.109736
M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fan, L. H. Allen, H. Morkoç, Low resistance ohmic contacts on wide band‐gap GaN Applied Physics Letters. ,vol. 64, pp. 1003- 1005 ,(1994) , 10.1063/1.111961
M. Asif Khan, J. N. Kuznia, D. T. Olson, J. M. Van Hove, M. Blasingame, L. F. Reitz, High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers Applied Physics Letters. ,vol. 60, pp. 2917- 2919 ,(1992) , 10.1063/1.106819
P. Hacke, T. Detchprohm, K. Hiramatsu, N. Sawaki, Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy Applied Physics Letters. ,vol. 63, pp. 2676- 2678 ,(1993) , 10.1063/1.110417
S.C. Binari, H.B. Dietrich, G. Kelner, L.B. Rowland, K. Doverspike, D.K. Gaskill, Electrical characterisation of Ti Schottky barriers on n-type GaN Electronics Letters. ,vol. 30, pp. 909- 911 ,(1994) , 10.1049/EL:19940565
R H Williams, V Montgomery, R R Varma, Chemical effects in Schottky barrier formation Journal of Physics C: Solid State Physics. ,vol. 11, pp. L735- L738 ,(1978) , 10.1088/0022-3719/11/17/006
M. Asif Khan, A. Bhattarai, J. N. Kuznia, D. T. Olson, High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction Applied Physics Letters. ,vol. 63, pp. 1214- 1215 ,(1993) , 10.1063/1.109775
D. P. Pappas, J. W. Glesener, V. G. Harris, Y. U. Idzerda, J. J. Krebs, G. A. Prinz, Growth of fcc Fe films on diamond Applied Physics Letters. ,vol. 64, pp. 28- 30 ,(1994) , 10.1063/1.110910