Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 × 1 to GeH4
作者： Chie-Sheng Liu , Li-Wei Chou , Lu-Sheng Hong , Jyh-Chiang Jiang
DOI: 10.1021/JA710802S
关键词:
摘要: This paper describes the initial reaction kinetics of Ge deposition after exposure Si(100)-2 × 1 to GeH4 in a UHV-CVD system. The rate growth, especially at wetting layer stage, was investigated using situ X-ray photoelectron spectroscopy measure signal onset deposition. A kinetic analysis growth temperatures ranging from 698 823 K revealed an activation energy 30.7 kcal/mol. Density functional theory calculations suggested that opening Si dimer—with closely matching barrier 29.7 kcal/mol, following hydrogen atom migration—was controlling step for incorporation GeH2 unit into lattice complete dissociative adsorption GeH4.
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