Wafer level package of Au-Ge system using a Ge chemical vapor deposition (CVD) thin film
作者： Kyeong-Keun Choi , Nazanin Hosseini , Jong Kee , Sung-Kyu Kim , Chan-Gyung Park
DOI: 10.1016/J.APSUSC.2016.05.081
关键词:
摘要: Abstract A Ge thin film deposited by chemical vapor deposition (CVD) was used to obtain a uniform bonding between Au and films for applications of wafer level packages (WLPs). This CVD showed selective growth on Cu metals when the substrate has both metal oxide. one-step two-step followed eutectic method employed bond wafers. The samples were characterized X-ray diffraction, field emission scanning electron microscopy equipped with an energy dispersive spectroscopy (FESEM-EDS), atomic force microscopy, high resolution Field transmission IR inspection tool secondary ion mass (SIMS). According results, sample more compared after bonding. Moreover, improved quality obtained from process. Based FESEM observations, crater-free interface detected bonded 4-inch wafers, in which presence beside Si confirmed EDS. SIMS profiles proved formation Au-Ge interlayer at interface, enhanced conditions.
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sci-hub.se 参考文章(32)
Ji Fan, Chuan Seng, Low Temperature Wafer-Level Metal Thermo-Compression Bonding Technology for 3D Integration InTech. ,(2012) , 10.5772/48216
Jongwan Jung, Shaofeng Yu, Oluwamuyiwa Oluwagbemiga Olubuyide, Judy L. Hoyt, Dimitri A. Antoniadis, Minjoo L. Lee, Eugene A. Fitzgerald, Effect of thermal processing on mobility in strained Si/strained Si1−yGey on relaxed Si1−xGex (x<y) virtual substrates Applied Physics Letters. ,vol. 84, pp. 3319- 3321 ,(2004) , 10.1063/1.1719275
Tong Yan Tee, Xuejun Fan, Yi-Shao Lai, Advances in Wafer Level Packaging (WLP) Microelectronics Reliability. ,vol. 50, pp. 479- 480 ,(2010) , 10.1016/J.MICROREL.2010.02.012
Hyun-Woo Kim, Keun Wook Shin, Gun-Do Lee, Euijoon Yoon, High quality Ge epitaxial layers on Si by ultrahigh vacuum chemical vapor deposition international conference on microelectronics. ,vol. 517, pp. 3990- 3994 ,(2009) , 10.1016/J.TSF.2009.01.169
Manseok Park, Soojung Baek, Sungdong Kim, Sarah Eunkyung Kim, Argon plasma treatment on Cu surface for Cu bonding in 3D integration and their characteristics Applied Surface Science. ,vol. 324, pp. 168- 173 ,(2015) , 10.1016/J.APSUSC.2014.10.098
Jurgen Michel, Jifeng Liu, Lionel C. Kimerling, High-performance Ge-on-Si photodetectors Nature Photonics. ,vol. 4, pp. 527- 534 ,(2010) , 10.1038/NPHOTON.2010.157
N. Malik, K. Schjølberg-Henriksen, E. Poppe, M.M.Visser Taklo, T.G. Finstad, Al-Al thermocompression bonding for wafer-level MEMS packaging international conference on solid state sensors actuators and microsystems. ,vol. 211, pp. 115- 120 ,(2013) , 10.1016/J.SNA.2014.02.030
F.Q. Lang, H. Yamaguchi, H. Nakagawa, H. Sato, Solid-State Interfacial Reaction between Eutectic Au-Ge Solder and Cu/Ni(P)/Au Metalized Ceramic Substrate and Its Suppression Journal of Materials Science & Technology. ,vol. 31, pp. 445- 452 ,(2015) , 10.1016/J.JMST.2014.10.010
Errong Jing, Bin Xiong, Yuelin Wang, Low-temperature Au–Si wafer bonding Journal of Micromechanics and Microengineering. ,vol. 21, pp. 015013- ,(2010) , 10.1088/0960-1317/21/1/015013
Hsin-Chiao Luan, Desmond R. Lim, Kevin K. Lee, Kevin M. Chen, Jessica G. Sandland, Kazumi Wada, Lionel C. Kimerling, High-quality Ge epilayers on Si with low threading-dislocation densities Applied Physics Letters. ,vol. 75, pp. 2909- 2911 ,(1999) , 10.1063/1.125187