Al-Al thermocompression bonding for wafer-level MEMS packaging
作者： N. Malik , K. Schjølberg-Henriksen , E. Poppe , M.M.Visser Taklo , T.G. Finstad
DOI: 10.1016/J.SNA.2014.02.030
关键词:
摘要: The Al-Al thermocompression bonding is studied on test structures suitable for wafer level packaging of MEMS devices. Si wafers with protruding frame have been bonded to planar all covered a 1 μm sputtered Al film. varied process variables were temperature (400 °C-550 °C), force (18-36 kN) and widths (100 μm, 200 rounded or sharp corners). delamination caused by dicing pull tests systematically studied. It concluded that incomplete at 400 °C, low yield. quality the increased increasing as expected. fractured surfaces strength in detail. showed an average 20-50 MPa above 450 °C. current study indicates strong bonds can be achieved °C typical bond frame.
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