Investigation of nanocrystalline CdS/Si diode using complex impedance spectroscopy
作者： Y.A. El-Gendy , I.S. Yahia , F. Yakuphanoglu
DOI: 10.1016/J.MATERRESBULL.2012.07.017
关键词:
摘要: Highlights: ► CdS/n-Si device was fabricated as a heterostructure. AFM used to examine the structure of CdS/n-Si. Complex impedance Z′and Z″were calculated. AC conductivity explained by power law relation. CBH model describe conduction mechanism. -- Abstract: via depositing CdS thin film onto pre-cleaned n-silicon substrates. The atomic force microscope crystal size deposited films and its roughness. real part complex Z′as function frequency at different temperatures were studied. dependence applied on basis bulk resistance has been calculated from Z″. temperature capacitance for frequencies also investigated.
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