作者: J. Cazaux
DOI: 10.1016/0304-3991(95)00077-1
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摘要: Abstract The goal of this paper is to correlate macroscopic positive charging electron-irradiated thin insulating specimens atomic displacements, migration and desorption effects. leading role the Auger process emphasized. It shown that electrons coming from surroundings cannot spontaneously compensate for (and secondary) electron emissions with result are missing in uppermost states valence bands. At steady state, density correlated beam electrical resistivity specimen. For highly resistive an expression etching rate also suggested. This analysis explains some experimental results such as positively charged anions into vacuum ionic compounds or displacement covalent compounds. influence crystalline non-crystalline state specimen considered. coating foil conductive layers analyzed. same applies X-ray irradiation.