Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy

摘要: The effect of the Schottky barrier height on detection midgap defects EH6 and EH7 in 4H-SiC by deep level transient spectroscopy (DLTS) is systematically studied. results show that DLTS peak - as a consequence observed defect concentration increases with increasing saturates above 1.5 eV for 1.7 EH7, while below 1.1 completely disappears. A model applied, which determines position quasi-Fermi space charge region function reverse bias applied explains variation height.