Bottom-gated epitaxial graphene

作者: Daniel Waldmann , Johannes Jobst , Florian Speck , Thomas Seyller , Michael Krieger

DOI: 10.1038/NMAT2988

关键词:

摘要: … epitaxial graphene as the SiC provides the source material out of which graphene grows. Here, we present a reliable scheme for the fabrication of bottom-gated epitaxial … source–drain …

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