Epitaxial graphene transistors: Enhancing performance via hydrogen intercalation

作者: Joshua A. Robinson , Matthew Hollander , Michael LaBella , Kathleen A. Trumbull , Randall Cavalero

DOI: 10.1021/NL2019855

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摘要: We directly demonstrate the importance of buffer elimination at graphene/SiC(0001) interface for high frequency applications. Upon successful elimination, carrier mobility increases from an average 800 cm2/(V s) to >2000 s). Additionally, graphene transistor current saturation 750 >1300 mA/mm, and transconductance improves 175 mS/mm >400 mS. Finally, we report a 10× improvement in extrinsic gain response transistors with optimal current–gain cutoff frequencies 24 GHz.

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