Failure mechanisms associated with the fabrication of InGaN-based LEDs
作者： P. Maaskant , M. Akhter , L. Considine
DOI: 10.1109/16.936713
关键词:
摘要: In this paper, we report on the device fabrication and characterization of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) sapphire substrates. Devices that showed nonrectifying behavior have been investigated it is suggested metal migration along defect tubes likely cause behavior, It recommended to use lower alloying temperatures for p-contact metallization avoid type failure. Deposition subsequent removal sputtered oxide was also found a highly detrimental effect quality.
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