Potential material for electroluminescence devices in the visible region
作者： N. V. Joshi , S. Ray , G. Menk
DOI: 10.1063/1.96345
关键词:
摘要: High intensity photoluminescence response has been observed in the visible region (λ=600 nm) a diluted magnetic semiconductor system Zn1−xMnxS (0.05≤x≤0.4) at 300 and 77 K for first time. The temperature concentration independent position of peak can be attributed to intraionic transition Mn++. Considering crystal field splitting parameter Racah’s coefficient using diagram proposed by Y. Tanabe S. Sugano [J. Phys. Soc. Jpn. 9, 753 (1954)], luminescence responsible was found 4T1–6A1. On basis high response, could promising material electroluminescence devices range where photopic human eye is nearly maximum.
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sci-hub.se 参考文章(11)
Optical properties of ions in solids Plenum Press. ,(1975) , 10.1007/978-1-4684-2787-5
M. P. Vecchi, W. Giriat, L. Videla, Photoluminescence studies of the Mn2+d‐levels in Cd1−xMnxTe Applied Physics Letters. ,vol. 38, pp. 99- 101 ,(1981) , 10.1063/1.92270
M. Aven, J.Z. Devine, Advances in injection luminescence of II–VI compounds Journal of Luminescence. ,vol. 7, pp. 195- 212 ,(1973) , 10.1016/0022-2313(73)90067-7
Hirohiko Katayama, Shunri Oda, Hiroshi Kukimoto, ZnS blue‐light‐emitting diodes with an external quantum efficiency of 5×10−4 Applied Physics Letters. ,vol. 27, pp. 697- 699 ,(1975) , 10.1063/1.88350
Dietrich Langer, Sumiaki Ibuki, Zero-Phonon Lines and Phonon Coupling in ZnS:Mn Physical Review. ,vol. 138, ,(1965) , 10.1103/PHYSREV.138.A809
Charles A. Morrison, A Specifiable Logarithmic High Aperture Iris with 15,000:1 Modulation Journal of the Optical Society of America. ,vol. 42, pp. 90- 93 ,(1952) , 10.1364/JOSA.42.000090
W. Giriat, Some optical properties of diluted magnetic semiconductors Progress in Crystal Growth and Characterization. ,vol. 10, pp. 45- 53 ,(1984) , 10.1016/0146-3535(84)90017-0
W.M. Becker, R. Bylsma, M.M. Moriwaki, R.Y. Tao, J.W. Richardson, Models for temperature dependence of photoluminescence bands in Cd1-xMnxTe Solid State Communications. ,vol. 49, pp. 245- 248 ,(1984) , 10.1016/0038-1098(84)90902-5
R. Y. Tao, M. M. Moriwaki, W. M. Becker, R. R. Galazka, Comparison of excitation spectra of 1.2‐ and 2.0‐eV photoluminescence bands in Cd1−xMnx Te for 0.4<x≲0.7 Journal of Applied Physics. ,vol. 53, pp. 3772- 3776 ,(1982) , 10.1063/1.331117
K. Sato, M. Morita, S. Okamoto, S. Morita, T. Kambara, K.I. Gondaira, H. Takenoshita, Red photoluminescence spectrum of CuAlS2 : Mn Progress in Crystal Growth and Characterization. ,vol. 10, pp. 311- 320 ,(1984) , 10.1016/0146-3535(84)90050-9