作者: S. A. Moiz , M. M. Ahmed
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摘要: In thisstudythin filmsof Poly-N Epoxipropylcarbazole (PEPC)dopedbyanthracene (An)were deposited overthesurface ofnickel (Ni) substrate atthegravity condition of277g(where g= 9.81m2/sec). TheCurrent-Voltage (I-V) characteristics ofthefabricated devices (Ga/PEPC/Ni) were determined at different ambienttemperature environment ranging from30°Cto60'C.Fromtheconductivity versus temperature response ofthedevices derived fromtheir I-V characteristics, itisobserved thatdevices follow three dimension variable rangehopping phenomena fortheir charge transport mechanism. By applying rangehoppingcharge model,hoppingconduction parameters oforganic semiconductor material areestimated. Fromtheresults ofthese estimations, thedependence ofelectrical properties asafunction oftemperature isevaluated anddiscussed. Keywords-component;