The effect of varying substrate temperature on the structural and optical properties of sputtered GaAs films
作者： S H Baker , S C Bayliss , S J Gurman , N Elgun , J S Bates
DOI: 10.1088/0953-8984/5/5/003
关键词:
摘要: Stoichiometric GaAs films have been prepared by RF sputtering over an appreciable range of substrate temperature Ts. The structural and optical properties these investigated means a variety experimental techniques. Transmission electron microscope (TEM) experiments reveal that for Ts>or= approximately 70 degrees C the structure consists nanocrystals embedded in amorphous network. EXAFS, XPS infrared are consistent with each other, indicating configurational disorder network decreases as Ts is raised. Most relates to bond-angle disorder; spread bond angle around Ga atoms found be less than As given temperature. changes observed fundamental absorption edge increasing discussed relation various possible defects GaAs.
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