Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering
作者： Terence Mittmann , Monica Materano , Patrick D. Lomenzo , Min Hyuk Park , Igor Stolichnov
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摘要: … to produce stable ferroelectric films over a wide thickness range with high remanent polarization 2P r of 18–20 µC cm −2 without using additional doping. Ferroelectric properties are …
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