Analytic band Monte Carlo model for electron transport in Si including acoustic and optical phonon dispersion

摘要: We describe the implementation of a Monte Carlo model for electron transport in silicon. The uses analytic, nonparabolic energy bands, which are computationally efficient and sufficiently accurate future low-voltage s, 1V d nanoscale device applications. electron-lattice scattering is incorporated using an isotropic, analytic phonon-dispersion model, distinguishes between optical/acoustic longitudinal/transverse phonon branches. show that this approach avoids introducing unphysical thresholds distribution function, it has further applications computing detailed generation spectra from Joule heating. A set deformation potentials electron-phonon introduced shown to yield simulations bulk silicon across wide range electric fields temperatures. shear potential empirically determined at Ju= 6.8 eV, consequently, isotropically averaged with longitudinal transverse acoustic phonons DLA= 6.39 eV DTA= 3.01 respectively, reasonable agreement previous studies. room-temperature mobility strained also computed be better most recent phonon-limited data available. As result, we find coupling g-type about 40% lower, f-type almost twice as strong previously reported. © 2004 American Institute Physics . [DOI: 10.1063/1.1788838]