MOS/sup 2/: an efficient MOnte Carlo Simulator for MOS devices
作者： Enrico Sangiorgi , Bruno Ricco , Franco Venturi
DOI: 10.1109/43.3157
关键词:
摘要: An efficient Monte Carlo device simulator has been developed as a postprocessor of two-dimensional numerical analyzer based on the drift-diffusion model. The package analyzes real VLSI MOSFETs in minicomputer environment, overcoming some existing theoretical and practical problems. In particular, particle free-flight time distribution is obtained by new algorithm, leading to CPU saving at least one order magnitude compared with traditional approach. To describe rare electron configurations, such high-energy tails distributions dynamics presence large retarding fields, multiple repetition scheme was implemented. Selected applications are presented illustrate simulator's capabilities. >
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