Implementation of Neural Network Method to Investigate Defect Centers in Semi-Insulating Materials
作者： S. JANKOWSKI , M. WIERZBOWSKI , P. KAMINSKI , M. PAWLOWSKI
DOI: 10.1142/S0217979202015595
关键词:
摘要: A neural network (NN) method has been proposed as a new algorithm for extraction of defect centers parameters in semi-insulating materials from experimental data obtained by photoinduced transient spectroscopy (PITS). The is applied to investigate irradiation-induced high resistive silicon. folds on the PITS spectral surface formed due presence levels are best fitted with two-dimensional approximation function implementation NN learning process. As result, Arrhenius plots and these determined.
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sci-hub.se 参考文章(1)
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