作者: PingAn Hu , Zhenzhong Wen , Lifeng Wang , Pingheng Tan , Kai Xiao
DOI: 10.1021/NN300889C
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摘要: Two-dimensional (2D) semiconductor nanomaterials hold great promises for future electronics and optics. In this paper, a 2D nanosheets of ultrathin GaSe has been prepared by using mechanical cleavage and solvent exfoliation method. Single-and few-layer GaSe nanosheets are exfoliated on an SiO2/Si substrate and characterized by atomic force microscopy and Raman spectroscopy. Ultrathin GaSe-based photodetector shows a fast response of 0.02 s, high responsivity of 2.8 AW–1 and high external quantum efficiency of …