On-Current Modeling of Polycrystalline Silicon Thin-Film Transistors

摘要: We propose an on-current (above threshold voltage) model of polycrystalline silicon thin-film transistors (poly-Si TFTs). The includes the study effect trap state density, poly-Si inversion layer thickness and temperature on TFT characteristics. Effective carrier mobility I-V characteristics are described by considering mechanism capture release carriers at grain boundary states thermionic emission theory. It is found that low as well high doping concentrations, effective (µeff) increases with increasing whereas a dip observed intermediate concentration. At very concentration to be almost negligible. Calculations reveal drain current increase gate bias larger for lower density. calculated value activation energy decreases thickness. A comparison between present predictions experimental results shows reasonably good agreement.