Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces
作者： Luxmi , N. Srivastava , Guowei He , R. M. Feenstra , P. J. Fisher
DOI: 10.1103/PHYSREVB.82.235406
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摘要: … , inhibiting coarsening of neighboring graphene domains. In particular, we provide evidence that on the C face the adjacent graphene domains, for formation temperatures 1250 C, are …
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