MES-FETs Fabricated on Doped a-Si Films

摘要: P atoms are doped into a-Si films by varying the mole fraction of PH3 to SiH4 (MP/S) while keeping Ar at 11. MES-FETs fabricated on and gm=1.3 10-4 mS/mm is obtained for those deposited MP/S=1.5 10-3. Effective mobility 1.9 cm2/Vs from transfer conductance pinch-off voltage MES-FETs, which about one order higher than that MIS-FETs.