Amorphous silicon thin film transistor with a depletion gate
作者： Biing-Seng Wu
DOI:
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摘要: The present invention is a high speed thin film transistor with an accumulation gate and depletion gate. When positive voltage applied to the gate, electrons are accumulated in channel region of operated at "on" state. If negative depleted, "off" on-current same as that conventional transistors; however, smaller off-current obtained.
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