Anomalous leakage current in LPCVD PolySilicon MOSFET's
作者： J.G. Fossum , A. Ortiz-Conde , H. Shichijo , S.K. Banerjee
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摘要: … at grain boundaries under the gate. This trapping also … current-v Atage characteristics of the thin-film (two-gate) polysilicon MOSFET. In this paper, we model the om-state leakage current…
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