Method for Determining Molecular‐Attachment Kinetics during Crystal Growth. Theory
作者： L. A. Tarshis , S. O'Hara
DOI: 10.1063/1.1709834
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摘要: The phenomenon of planar faceting an otherwise curved interface is re‐examined and shown to provide experimental means determining crystal‐growth laws magnitude kinetic constants. Facets are often observed form during crystal growth as a result the large driving force required generate new layer sources. This be orders larger than that for layer‐edge passage. As result, must depart from its equilibrium morphology facet in those crystallographic directions requiring source generation. nonequilibrium departure related actual interfacial undercooling through temperature gradient at interface. effect non‐regular on steady‐state considered. Pertinent experiments described detail exemplary cases cited.
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