A New High Efficiency Current Source Driver With Bipolar Gate Voltage

作者: Jizhen Fu , Zhiliang Zhang , Yan-Fei Liu , Paresh C. Sen , Lusheng Ge

DOI: 10.1109/TPEL.2010.2077741

关键词:

摘要: A novel bipolar current source driver (CSD) for power MOSFETs is proposed in this paper. The CSD alleviates the gate diversion problem of existing CSDs by clamping voltage to a flexible negative value (such as -3.5 V) during turn-off transition. Therefore, able turn off MOSFET much faster with higher effective current. idea presented paper can also be extended other further improve efficiency high output currents. experimental results verify benefits CSD. For buck converters 12 V input at 1 MHz switching frequency, improves from 80.5% using 82.5% (an improvement 2%) 1.2 V/30 A, and 1.3 output, 83.9% 1.4%).

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