Transistor design and layout for performance improvement with strain
作者： Timothy A. Rost
DOI:
关键词:
摘要: The present invention facilitates semiconductor device fabrication and performance by providing a that can improve channel mobility for both N type P transistor devices. of the is fabricated on substrate 802 has first second crystallographic orientation axes (e.g., , ) 804 806 . Source to drain regions devices are formed 904 aligned along axis. 906 rotated from an offset angle so source with Subsequently, uniaxial or biaxial tensile stress 908 applied compressive 910
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