Semiconductor device structure with active regions having different surface directions

摘要: Semiconductor structure and method to simultaneously achieve optimal stress type current flow for both nFET pFET devices, gates orientated in one direction, are disclosed. One embodiment of the includes bonding a first wafer having surface direction orientation atop second different direction; forming an opening through wafer; region coplanar with wafer, wherein has direction. The semiconductor device at least two active regions directions, each including plurality nFETs pFETs, gate electrode is such that pFETs substantially parallel other.