Temperature-dependent photoluminescence characterization of Cd1?x?yBexZnySe mixed crystals
作者： J Z Wang , P J Huang , Y S Huang , F Firszt , S Łęgowski
DOI: 10.1088/0953-8984/19/9/096216
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摘要: Temperature-dependent photoluminescence (PL) characterization of a series wurtzite-type Cd1−x−yBexZnySe mixed crystals has been carried out in the temperature range between 15 and 300 K. The samples were grown by modified high pressure Bridgman method. A typical PL spectrum at low consists an exciton line, edge emission due to recombination shallow donor–acceptor pairs broad band related through deep level defects. peak positions excitonic line spectra correspond quite well transition energies from previously reported electromodulation reflectance data (Liu et al 2005 J. Appl. Phys. 98 083519). parameters that describe dependence energy broadening parameter band-edge are evaluated discussed.
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sci-hub.se 参考文章(44)
Y. T. Liu, P. Sitarek, Y. S. Huang, F. Firszt, S. Łęgowski, H. Męczyńska, A. Marasek, W. Paszkowicz, K. K. Tiong, Temperature dependence of the edge excitonic transitions of the wurtzite Cd1−x−yBexZnySe crystals Journal of Applied Physics. ,vol. 98, pp. 083519- ,(2005) , 10.1063/1.2115096
L Malikova, Wojciech Krystek, Fred H Pollak, N Dai, A Cavus, MC Tamargo, None, Temperature dependence of the direct gaps of ZnSe and Zn 0.56 Cd 0.44 Se Physical Review B. ,vol. 54, pp. 1819- 1824 ,(1996) , 10.1103/PHYSREVB.54.1819
P. Lautenschlager, M. Garriga, S. Logothetidis, M. Cardona, Interband critical points of GaAs and their temperature dependence. Physical Review B. ,vol. 35, pp. 9174- 9189 ,(1987) , 10.1103/PHYSREVB.35.9174
L. Viña, S. Logothetidis, M. Cardona, Temperature dependence of the dielectric function of germanium Physical Review B. ,vol. 30, pp. 1979- 1991 ,(1984) , 10.1103/PHYSREVB.30.1979
F Firszt, Radiative recombination processes in layers Semiconductor Science and Technology. ,vol. 12, pp. 272- 279 ,(1997) , 10.1088/0268-1242/12/3/006
E. Cohen, M. D. Sturge, Erratum: Fluorescence line narrowing, localized exciton states, and spectral diffusion in the mixed semiconductor CdS x Se 1-x Physical Review B. ,vol. 25, pp. 3828- 3840 ,(1982) , 10.1103/PHYSREVB.25.3828
Y. S. Huang, Fred H. Pollak, S. S. Park, K. Y. Lee, H. Morkoç, Contactless electroreflectance, in the range of 20 K<T<300 K, of freestanding wurtzite GaN prepared by hydride-vapor-phase epitaxy Journal of Applied Physics. ,vol. 94, pp. 899- 903 ,(2003) , 10.1063/1.1582230
Chang-Hsun Hsieh, Ying-Sheng Huang, Ching-Hwa Ho, Kwong-Kau Tiong, Martin Muñoz, Oleg Maksimov, Maria C Tamargo, None, Temperature Dependence of the Band-Edge Transitions of ZnCdBeSe Japanese Journal of Applied Physics. ,vol. 43, pp. 459- 466 ,(2004) , 10.1143/JJAP.43.459
Y.P. Varshni, Temperature dependence of the energy gap in semiconductors Physica D: Nonlinear Phenomena. ,vol. 34, pp. 149- 154 ,(1967) , 10.1016/0031-8914(67)90062-6
D. L. Rosen, Q. X. Li, R. R. Alfano, Native defects in undoped semi-insulating CdSe studied by photoluminescence and absorption Physical Review B. ,vol. 31, pp. 2396- 2403 ,(1985) , 10.1103/PHYSREVB.31.2396