Laser-enhanced diffusion of nitrogen and aluminum dopants in silicon carbide
作者： Z. Tian , N.R. Quick , A. Kar
DOI: 10.1016/J.ACTAMAT.2006.05.020
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摘要: The diffusivities of different types of dopant atoms in silicon carbide wafers are generally very low. Nd: YAG and excimer lasers have been used to dope silicon carbide with nitrogen and aluminum, respectively. Mathematical models have been presented for the temperature distributions in the wafers to understand the diffusion mechanisms in the laser doping process. Since the silicon carbide substrate reaches its peritectic temperature (3100K) at irradiances of 80.6 and 61MW/cm2 for Nd: YAG and excimer lasers, respectively, lower …
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