Measuring properties of point defects by electron microscopy: The Ga vacancy in GaAs
作者： J-L. Rouviere , Y. Kim , J. Cunningham , J. A. Rentschler , A. Bourret
DOI: 10.1103/PHYSREVLETT.68.2798
关键词:
摘要: Exploiting the high spatial resolution and sensitivity of chemical mapping, we measure intermixing in a series microscopic marker layers imbedded GaAs to detect passage Ga vacancies injected at surface before steady state has been reached. We thus deduce each formation migration enthalpies for vacancy under technologically relevant conditions. More generally, show how multilayers may be used as laboratories investigate properties intrinsic point defects solids.
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